論文
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R. D. Chang, P. S. Choi, D. L.Kwong, D. Wristers
and P. K. Chu, "Boron segregation in As-implanted Si caused by electric
field and transient enhanced diffusion", Appl. Phys. Lett. Vol. 72, p.
1709, 1998.
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R. D. Chang, P. S. Choi, D. Wristers and D. L Kwong,
"Experiments and modeling of boron segregation in As implanted Si during
annealing", International Electron Device Meeting (IEDM), Washington, DC,
1997.
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R. D. Chang, P. S. Choi, D. Wristers, P. K. Chu and
D. L Kwong, "Boron segregation in As implanted Si due to electric field
and transient enhanced diffusion", SPIE Microelectronic Manufacturing,
Austin TX, 1997.
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P. S. Choi, T. Su, R. D. Chang and D. L. Kwong, "Post-implant
anneal: fundamental differences in dopant diffusion and activation due
to rapid thermal annealing/furnace annealing", 4th International Symposium
on Process Physics and Modeling of Semiconductor Devices, Los Angeles,
CA, 1996.
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R. D. Chang, R. C. Deng, S. I. Hsu and S. T. Chiang,
"The impact of ion-implantation damage on dopant diffusion", International
Electron Devices and Materials Symposium, Hsinchu, Taiwan, 1994.
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T.T. Sheng, C. Y. Lu, R. D. Chang and S. T. Chiang,
"Transmission electron microscopy analysis of "black belt": the masking
film of white ribbon of Kooi effect in the local oxidation of silicon process",
J. Appl. Phys. Vol. 75, p. 3810, 1994.
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T. T. Sheng, C. Y. Lu, R. D. Chang and S. T. Chiang,
"From "white ribbon" to "black belt": a direct observation of the Kooi
effect masking film by transmission electron microscopy", J. Electrochem.
Soc. Vol. 140, p. L163, 1993.
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T. F. Chen, T. S. Li and R. D. Chang, "Anomalous
boron diffusion in BF2+ implanted silicon", International Electron Devices
and Materials Symposium, Taipei, Taiwan, 1992.
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R. D. Chang, T. F. Chen and Julia S. Fu, "Impurity
gettering toward residual damages in shallow junctions", International
Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan,
1992.
專利
張睿達 “淺接面場效電晶體的製造方法”
中華民國 發明專利.