ˇ@ ˇ@ ˇ@
ˇ@

Home

Chinese

English

ˇ@

ˇ@

ˇ@
     

Director

ˇ@

Professor Liann-be Chang
Education:Ph.D., National Defense University. Post. Doct, University of Illinois at Urbana Champaign.
Tel:(03)2118800-5793
Email: liann@mail.cgu.edu.tw
Expertise:Solar cellsˇBPhoto-electronic devicesˇBEMP protectionˇBMicrowave devices.
Website:
Solar Cell and Electric-Optical Device Reliability Laboratory

         Journal Paper(2008~2009)

ˇ@

1.    Journal of the Electrochemical Society 157 (2) H160-H164 (2010), Hsien-Chin Chiu, Chao-Wei Lin, Chao-Hung Chen, Chin-Wei Yang, Che-Kai Lin, Jeffrey S. Fu, Liann-Be Chang, Ray-Ming Lin and Kuang-Po Hsueh, ˇ§Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTsˇ¨

ˇ@

2.    IEEE Transactions on Electron Devices 57 (1) (2010) 119-124, Liann-Be Chang, Kuo-Ling Chiang, Hsin-Yi Chang, Ming-Jer Jeng, Chia-Yi Yen, Cheng-Chen Lin, Yuan-Hsiao Chang, Mu-Jen Lai, Yu-Lin Lee and Tai-Wei Soong, ˇ§Electrostatic reliability characteristics of GaN Flip-Chip power light emitting diodes with metal Oxide silicon submountˇ¨

3.    Japanese Journal of Applied Physics 48 05DF02 (2009), Atanu Das, Siddheswar Maikap, Wei-Chih Li, Liann-Be Chang, and Jer-Ren Yang, ˇ§Physical and Memory Characteristics of Atomic-Layer-Deposited High-k HafniumˇVAluminum-Oxide Nanocrystal Capacitors with Iridium-OxideMetalGateˇ¨

4.    Microelectronic Engineering (2009), Atanu Das, S. Maikap, C.-H. Lin, P.-J. Tzeng, T.-C. Tien, T.-Y. Wang, L.-B. Chang, J.-R. Yang, M.-J. Tsai, ˇ§Ruthenium Oxide Metal Nanocrystal Capacitors with High-k Dielectric Tunneling Barriers for Nanoscale Nonvolatile Memory Device Applicationsˇ¨In Press.

5.    Microwave and Optical Technology Letters Vol.51,No 12 (2009),Ji-Chyun Liu, Jhih-Wei Wang, Atanu Das and Liann-Be Chang, ˇ§Wide-Band Double-Ring Resonator with Transmission Zeros and Resonances Using High Permittivity Aluminum Nitride Substrateˇ¨

ˇ@

6.    Journal of Physics D: Applied Physics 42 (10), art. no.105101 (6pp), 2009.4.24, Ming-Jer Jeng, Yu-Lin Lee and Liann-Be Chang, ˇ§Temperature dependence of InxGa1-xN multiple quantum well solar cellsˇ¨

ˇ@

7.    Applied Surface Science, Volume 225 Pages 6155-6158, 2009.3.1, Liann-Be Chang,Ching-Chuan Shiue,Ming-Jer Jeng,ˇ¨High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contancts for flip-chip Light-emitting diode(FCLED) applicationˇ¨ˇiSCI/EIˇj

ˇ@

8.    Journal of the Electrochemical Society, 156 (3), pp. K28-K32, 2009. S. Maikap, Atanu Das, T. Y. Wang, T. C. Tien, and L. B. Chang, ˇ§High-k HfO2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited HfO2/Al2O3 nano-mixturesˇ¨ ˇiSCIˇj

ˇ@

9.    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 11,2008, Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, ˇ§Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-kPraseodymium OxideLayerˇ§ˇiSCI/EIˇj

ˇ@

10.  Semiconductor Science and Technology, Volume 23, Issue 3(2008), Chiu, H.-C., Huang, Y.-C., Chang, L.-B., Chien, F.-T, ˇ§GaAs pseudomorphic HEMT with insulating gate films formed by P 2S5/(NH4)2SX sulfurization of recessed GaAs surfaceˇ§ˇiSCI/EIˇj

ˇ@

11.  SPIE the international and society for optical engineering, Volume 6894, 2008, P.P 689412 (2008), Chang, L.-B., Chang, Y.-H., Chang, Y.-S., Jeng, M.-J, ˇ§On chip surge protection for GaN-power LEDs by ZnO thin film varistorˇ§ˇiSCI/EIˇj

ˇ@

12.  Applied Surface Science, Volume 254, Issue 15, Pages 4479-4482 (2008), Jeng, Ming Jer, Shiue, Ching Chuan, Chang, Liann Be, ˇ§The reflectivity of Mo/Ag/Au ohmic contacts on p-type GaN for flip-chip light-emitting diode (FCLED) applicationsˇ¨ˇiSCI/EIˇj

ˇ@

13.  Journal of the Electrochemical Society 155 (12), pp. H955-H958(2008), Chiu, Hsien Chin, Lin, Chao W, Lin, Che K, Chang Liann Be,

 ˇ§Comprehensive study of GaAs MOSFETs using gadolinium oxide and praseodymium oxide layersˇ§ˇiSCI/EIˇj

14.  IEEE Trans. Electron Device, vol.55, pp. 721-726 (2008), Hsien-Chin Chiu, Yuan-Chang Huang, Chung-Wen Chen and Liann-Be Chang, ˇ§Electrical Characteristics of Passivated Pseudomorphic HEMTs with P2S5/(NH4)2SX Pretreatmentˇ¨

ˇ@

ˇ@
ˇ@
CGU Green Technology Research CenterˇECopyright, 2008
AddrˇG259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan,Taiwan, 333, R.O.CˇETelˇG03-2118800-5803 ˇE FaxˇG03-211-8507
URLˇGhttp://www.cgu.edu.tw/gtrc/ ˇEE-mailˇGgfhsu@mail.cgu.edu.tw
ˇ@